| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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41 pcs
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41 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The Kioxia TC58NVG2S0HTAI0 is a 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). It is organized as (4096 + 256) bytes x 64 pages x 2048 blocks, featuring a serial interface for command, address, and data input/output.
This device operates from a single 3.3V power supply, with a voltage range of 2.7V to 3.6V. Key electrical characteristics include a cell array to register access time of 25 µs maximum and a read cycle time of 25 ns minimum. Program and erase operations are automated, with typical times of 300 µs/page for programming and 2.5 ms/block for erasing.
Designed for applications requiring high-density non-volatile memory, such as solid-state file storage, voice recording, and image file memory for still cameras, the TC58NVG2S0HTAI0 is housed in a TSOP I 48-P-1220-0.50 package. It requires 8-bit ECC for every 512 bytes of data. The operating temperature range is -40°C to 85°C.
The nominal operating voltage is 3.3V with a range of 2.7V to 3.6V.
TSOP I 48-pin package (48-P-1220-0.50).
-40°C to 85°C.
4 Gbit (512M x 8 bit).
Serial interface.
8 bit ECC for each 512 bytes is required.