| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,503 pcs
|
3503 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Kioxia America TC58NVG2S0HTAI0 is a 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). It is organized as 512M x 8 and utilizes a parallel interface.
This device operates from a power supply voltage ranging from 2.7V to 3.6V. Key electrical characteristics include an access time of 25 ns and a read cycle time of 25 ns. Program and erase operations are automated, with typical times of 300 µs/page for programming and 2.5 ms/block for erasing. Operating currents are rated at 30 mA for read, program, and erase, with a standby current of 50 µA max.
The TC58NVG2S0HTAI0 is packaged in a 48-TSOP I (1220-0.50) surface-mount package. The operating temperature range is -40°C to 85°C (TA). This memory is suitable for applications requiring high-density non-volatile data storage, such as solid-state file storage and image file memory.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size of the TC58NVG2S0HTAI0 is 4Gbit.
The TC58NVG2S0HTAI0 operates within a voltage range of 2.7V to 3.6V.
The TC58NVG2S0HTAI0 can operate in temperatures ranging from -40°C to 85°C.
The TC58NVG2S0HTAI0 is available in a 48-TSOP I package.
The access time of the TC58NVG2S0HTAI0 is 25 ns.
The memory organization is 512M x 8.
The mounting type for the TC58NVG2S0HTAI0 is Surface Mount.