| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,048 pcs
|
18048 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,800 pcs
|
2800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Kioxia America TC58NVG1S3HTA00 is a 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). It is organized as 256M x 8 bits and features a parallel memory interface.
Key electrical specifications include an access time of 25 ns and a read cycle time of 25 ns. The device operates within a voltage range of 2.7V to 3.6V. Program and erase operations are automatically executed, with auto page program times of 300 µs/page and auto block erase times of 2.5 ms/block.
This NAND Flash memory is housed in a 48-TSOP I package, suitable for surface mount applications. The operating temperature range is from 0°C to 70°C (TA). The device is designed for high-density non-volatile data storage applications such as solid-state file storage and image file memory.
Additional features include a minimum of 2008 valid blocks and a maximum of 2048 valid blocks. Operating currents are rated at 30 mA max for read, program, and erase operations, with a standby current of 50 µA max.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TC58NVG1S3HTA00 has a memory size of 2 Gbit.
It operates from 2.7 V to 3.6 V.
It is available in a 48-TSOP I surface mount package.
The operating temperature range is 0°C to 70°C.
The memory is organized as 256M x 8 bits.
The access time is 25 ns.
It uses SLC (single-level cell) NAND flash technology.