| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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115 pcs
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115 pcs | On Request | 1 | On Request | On Request | 1605+ | On Request | On Request |
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The Kioxia TC58NVG1S3HBAI4 is a high-density, single 3.3V NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). It offers a storage capacity of 2 Gbit (2,281,701,376 bits) and is organized as (2048 +128) bytes × 64 pages × 2048 blocks.
Key electrical specifications include a page size of 2176 bytes and a block size of (128K + 8K) bytes. The device supports various modes such as Read, Auto Page Program, and Auto Block Erase. It operates within a power supply range of 2.7V to 3.6V, with typical operating currents of 30 mA for read, program, and erase operations, and a standby current of 50 µA max.
Designed for applications requiring non-volatile data storage, the TC58NVG1S3HBAI4 features an access time of 25 µs max (cell array to register) and a read cycle time of 25 ns min. Program and erase operations are automated, with typical program time of 300 µs/page and block erase time of 2.5 ms/block.
The component is housed in a P-TFBGA63-0911-0.80CZ package, weighing approximately 0.15 g. It is suitable for solid-state file storage, voice recording, and image file memory for still cameras.
The memory size is 2 Gbit.
It is a NAND E2PROM.
The organization is 2176 x 8.
The page size is 2176 bytes.
The operating voltage is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
It is supplied in a P-TFBGA63-0911-0.80CZ package.