| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,228 pcs
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8228 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TC58NVG1S3HBAI4 from Kioxia America, Inc. is a 2 Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). This device is organized as 256M x 8 bits and utilizes a parallel interface.
Key electrical specifications include a voltage range of 2.7V to 3.6V and an access time of 25 ns. The memory supports various modes such as Read, Auto Page Program, and Auto Block Erase. Program and erase operations are automatically executed, making it suitable for applications requiring high-density non-volatile data storage.
Packaged in a 63-TFBGA (9x11) or 63-VFBGA, the TC58NVG1S3HBAI4 is designed for surface mount applications. Its operating temperature range is -40°C to 85°C.
This NAND Flash memory is ideal for solid-state file storage, voice recording, and image file memory for still cameras, offering reliable non-volatile data storage solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 2 Gbit.
It is a Non-Volatile NAND Flash memory.
The memory interface is Parallel.
The operating voltage is between 2.7V and 3.6V.
The access time is 25 ns.
The operating temperature is from -40°C to 85°C.
It is supplied in a 63-TFBGA (9x11) package.