TC58FVM6B5BXG65 The Toshiba TC58FVM6B5BXG65 is a 4M x 16 FLASH 3V PROM memory integrated circuit. It operates asynchronously with a maximum access time of 65 ns.
Mfr Part #:

TC58FVM6B5BXG65

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TC58FVM6B5BXG65 is a 4M x 16 FLASH 3V PROM memory integrated circuit. It operates asynchronously with a maximum access time of 65 ns.
✓ Total Stock: 30 pcs

TC58FVM6B5BXG65 Available from 1 distributor

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✓ Non-Authorised
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30 pcs
30 pcs On Request 1 On Request On Request 11+ On Request On Request

TC58FVM6B5BXG65 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Tape & Reel

TC58FVM6B5BXG65 Description

Short technical summary and product information.

The Toshiba TC58FVM6B5BXG65 is a high-performance FLASH 3V PROM memory IC designed for various electronic applications. It offers an organization of 4M x 16 bits, providing a total memory density suitable for data storage and program execution.

 

This component operates asynchronously and features a maximum access time of 65 ns, ensuring rapid data retrieval. The supply voltage ranges from 2.7V to 3.6V, with a nominal voltage of 3V, making it compatible with a wide array of system power requirements. The technology used is CMOS, contributing to its efficiency and performance.

 

Packaged in a TFBGA-56 (7 x 10 mm, 0.80 mm pitch) with a surface mount type, the TC58FVM6B5BXG65 is designed for compact and efficient board layouts. It operates within an industrial temperature range of -40°C to 85°C, suitable for demanding environments. The part is lead-free and RoHS3 compliant.

 

Key specifications include a 16-bit memory width and 56 terminals. This FLASH memory is ideal for applications requiring reliable and fast non-volatile storage.

TC58FVM6B5BXG65 Quick Information

Product Type: FLASH 3V PROM Memory
Canonical Name: Toshiba TC58FVM6B5BXG65 4M x 16 FLASH 3V PROM
Subcategory: FLASH Memory

TC58FVM6B5BXG65 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

TC58FVM6B5BXG65 Features

  • 4M x 16 organization FLASH 3V PROM memory.
  • Maximum access time of 65 ns.
  • Wide supply voltage range of 2.7V to 3.6V.
  • CMOS technology for efficient operation.
  • TFBGA-56 surface mount package.

TC58FVM6B5BXG65 Applications

  • Code storage in embedded microcontroller systems.
  • Data logging in industrial control applications.
  • Firmware storage in networking equipment.
  • Boot memory for automotive electronics modules.
  • Configuration storage in portable instrumentation.

TC58FVM6B5BXG65 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the memory organization of the TC58FVM6B5BXG65?

The memory is organized as 4M words x 16 bits (4M x 16).

What is the access time of this Flash memory?

The maximum access time is 65 ns.

What is the operating voltage range?

The supply voltage range is 2.7V to 3.6V, with a nominal voltage of 3.0V.

What is the operating temperature range?

The operating temperature range is -40°C to +85°C.

What package does the TC58FVM6B5BXG65 come in?

It comes in a 56-ball TFBGA (Thin Fine-Pitch Ball Grid Array) package measuring 7 x 10 mm with a 0.80 mm ball pitch.

Is the TC58FVM6B5BXG65 lead-free?

Yes, the device is lead-free.

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