| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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29 pcs
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29 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The TC58FVM6B2ATG65 is a 67108864-bit, electrically erasable and programmable flash memory manufactured by Toshiba Semiconductor. It is organized as 8388608 words × 8 bits or 4194304 words × 16 bits, offering flexibility for various applications.
This flash memory supports JEDEC standard commands for Read, Program, and Erase operations, allowing for easy interfacing with microprocessors. Both Program and Erase operations are executed automatically within the chip. A key feature is the Simultaneous Read/Write operation, enabling data to be read during Write or Erase cycles.
Key electrical characteristics include a power supply voltage range of 2.3V to 3.6V and a power dissipation of 600 mW. It operates within an ambient temperature range of -40°C to 85°C. The device comes in a TSOP package.
Power consumption varies by operation: 10 μA in standby, 15 mA during Program/Erase, 55 mA for random reads, 11 mA for address increment reads, and 5 mA for page reads.
The TC58FVM6B2ATG65 has a 67108864-bit (64 Mbit) flash memory organized as 8388608 words x 8 bits or 4194304 words x 16 bits.
The operating voltage (VDD) is 2.3 V to 3.6 V.
The operating temperature range is -40°C to 85°C.
The standby current is 10 μA.
The device is available in a TSOP package.
The power dissipation is 600 mW.