| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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9,040 pcs
|
9040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
948 pcs
|
948 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
61 pcs
|
61 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The Toshiba TC58FVM6B2ATG65 is a high-density, 67108864-bit electrically erasable and programmable flash memory. It is organized as 8388608 words × 8 bits or 4194304 words × 16 bits, offering flexibility for various applications.
This flash memory features commands compatible with the JEDEC standard for easy interfacing with microprocessors. Both Program and Erase operations are executed automatically within the chip. A key feature is the Simultaneous Read/Write operation, allowing data to be read during Write or Erase cycles.
Operating with a VDD supply voltage range of 2.3 V to 3.6 V, the TC58FVM6B2ATG65 is designed for a wide operating temperature range of -40°C to 85°C. It is housed in a TSOP package, suitable for surface mounting.
Power consumption is optimized, with a standby current of 10 μA, and program/erase operations drawing 15 mA. Random read operations consume 55 mA, while address increment and page read operations are more power-efficient at 11 mA and 5 mA respectively.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TC58FVM6B2ATG65 has a capacity of 67108864-bit.
It can be organized as 8388608 words × 8 bits or 4194304 words × 16 bits.
The power supply voltage VDD ranges from 2.3 V to 3.6 V.
The operating temperature range is -40°C to 85°C.
The TC58FVM6B2ATG65 comes in a TSOP package.