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TC58BYG0S3HBAI6 The Kioxia TC58BYG0S3HBAI6 is a 1 Gbit NAND Flash memory device with a 25 ns access time. It operates from a 1.7V to 1.95V supply and comes in a 67-VFBGA package.
Mfr Part #:

TC58BYG0S3HBAI6

Available from 1 distributors
Mfr Name: Kioxia America, Inc.
Kioxia America, Inc.
The Kioxia TC58BYG0S3HBAI6 is a 1 Gbit NAND Flash memory device with a 25 ns access time. It operates from a 1.7V to 1.95V supply and comes in a 67-VFBGA package.
✓ Total Stock: 6,000 pcs
$ Price Range: $1.28

TC58BYG0S3HBAI6 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
6,000 pcs
On Request
6000 pcs On Request 1 On Request On Request On Request On Request On Request
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TC58BYG0S3HBAI6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Operating Voltage
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time
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TC58BYG0S3HBAI6 Description

Short technical summary and product information.

The Kioxia TC58BYG0S3HBAI6 is a 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). Organized as (2048 + 64) bytes x 64 pages x 1024 blocks, this device utilizes a serial interface for address and data input/output. It features automatic Erase and Program operations, making it suitable for applications requiring high-density non-volatile data storage.

 

Key electrical specifications include a memory size of 1 Gbit, a memory type of Non-Volatile Flash - NAND (SLC), and a memory interface of Parallel. The device offers a fast access time of 25 ns and a write cycle time of 25 ns. It operates within a voltage range of 1.7V to 1.95V.

 

This memory IC is housed in a 67-VFBGA package and supports surface mount technology. The operating temperature range is -40°C to 85°C (TA). The device includes on-chip ECC logic capable of correcting 8-bit read errors for each 528 Bytes. Typical program/erase times are 330 µs/page for auto page program and 3.5 ms/block for auto block erase.

TC58BYG0S3HBAI6 Quick Information

Product Type: NAND Flash Memory
Canonical Name: Kioxia TC58BYG0S3HBAI6 NAND Flash Memory
Subcategory: NAND Flash

TC58BYG0S3HBAI6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TC58BYG0S3HBAI6 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

TC58BYG0S3HBAI6 Features

  • 1 Gbit NAND Flash memory capacity.
  • Fast 25 ns access and write cycle times.
  • 1.7V to 1.95V operating voltage range.
  • On-chip 8-bit ECC error correction.
  • Compact 67-VFBGA surface mount package.

TC58BYG0S3HBAI6 Applications

  • Ideal for solid-state file storage.
  • Suitable for voice recording applications.
  • Used in image file memory systems.
  • High-density non-volatile storage needs.

TC58BYG0S3HBAI6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the TC58BYG0S3HBAI6?

1 Gbit

What is the memory interface?

Parallel

What is the access time?

25 ns

What is the operating voltage range?

1.7V to 1.95V

What is the operating temperature range?

-40°C to 85°C

What package is the device available in?

67-VFBGA (6.5x8)

What is the standby current?

50 µA

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