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TC58BVG1S3HTAI0 The Toshiba TC58BVG1S3HTAI0 is a 2 Gbit NAND E2PROM memory device. It operates at 3.3V and features an integrated 8-bit ECC.
Mfr Part #:

TC58BVG1S3HTAI0

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TC58BVG1S3HTAI0 is a 2 Gbit NAND E2PROM memory device. It operates at 3.3V and features an integrated 8-bit ECC.
✓ Total Stock: 9,433 pcs

TC58BVG1S3HTAI0 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
8,000 pcs
On Request
8000 pcs On Request 1 On Request On Request 16+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,433 pcs
On Request
1433 pcs On Request 1 On Request On Request 16+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TC58BVG1S3HTAI0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Halogen Free
Industrial Grade
Lead Spacing
Lead Style
Medical Grade
Memory Size
Memory Type
Military Grade
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Storage Temperature
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TC58BVG1S3HTAI0 Description

Short technical summary and product information.

The KIOXIA (formerly Toshiba) TC58BVG1S3HTAI0 is a 2 Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). This serial-type memory device is organized as x8 and features a page size of 2112 bytes and a block size of (128K + 4K) bytes. It operates from a single 2.7V to 3.6V power supply, with a nominal voltage of 3.3V.

 

The TC58BVG1S3HTAI0 includes an integrated 8-bit ECC logic for error correction for every 528 bytes. It supports various modes including Read, Auto Page Program, and Auto Block Erase. The device offers fast access times, with cell array to register access at 40 µs typical for single page reads and 55 µs typical for multi-page reads. Program and erase operations are automated, with typical times of 330 µs/page for programming and 2.5 ms/block for erasing.

 

This NAND E2PROM is packaged in a 48-pin TSOP I (48-P-1220-0.50) with a typical weight of 0.53g. Its high-density non-volatile memory storage makes it suitable for applications such as solid-state file storage, voice recording, and image file memory for still cameras.

TC58BVG1S3HTAI0 Quick Information

Product Type: NAND E2PROM
Series: TC58BVG1S3H
Canonical Name: TC58BVG1S3HTAI0 2 Gbit NAND E2PROM
Subcategory: Memory

TC58BVG1S3HTAI0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

TC58BVG1S3HTAI0 Features

  • 2 Gbit NAND E2PROM memory device.
  • Operates from a 2.7V to 3.6V supply.
  • Integrated 8-bit ECC logic included.
  • TSOP I 48-pin package.
  • Suitable for high-density storage applications.

TC58BVG1S3HTAI0 Applications

  • Ideal for solid-state file storage.
  • Used in voice recording systems.
  • Suitable for still camera image memory.
  • Supports various high-density storage needs.

TC58BVG1S3HTAI0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the TC58BVG1S3HTAI0?

The TC58BVG1S3HTAI0 has a memory size of 2 Gbit.

What is the memory type of this device?

This device is a NAND E2PROM.

What is the page size of the TC58BVG1S3HTAI0?

The page size is 2112 bytes.

What is the block size of this NAND memory?

The block size is 128K + 4K bytes.

What is the operating voltage range for the TC58BVG1S3HTAI0?

The operating voltage range is 2.7V to 3.6V.

What is the read cycle time of this device?

The minimum read cycle time is 25 ns.

Does the TC58BVG1S3HTAI0 include ECC?

Yes, on-chip 8-bit ECC for each 528 bytes is implemented.

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