| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20,000 pcs
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20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Kioxia TC58BVG1S3HTAI0 is a 2 Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). It is organized as 256M x 8 bits and operates from a single 3.3V power supply, with a voltage range of 2.7V to 3.6V.
This serial-type memory device utilizes I/O pins for both address and data input/output. It features automatic Erase and Program operations, making it suitable for applications requiring high-density non-volatile memory storage, such as solid-state file storage and image file memory.
The device has an access time of 25 ns and a write cycle time of 25 ns. It includes on-chip ECC logic capable of correcting 8-bit read errors for each 528 Bytes. The TC58BVG1S3HTAI0 is available in a 48-TSOP I package, suitable for surface mounting.
Key features include a memory size of 2 Gbit, a memory interface of Parallel, and a memory organization of 256M x 8. The operating temperature range is -40°C to 85°C (TA).
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2 Gbit.
Parallel.
2.7V to 3.6V.
-40°C to 85°C.
48-TSOP I (48-TFSOP, 0.724" width).
Yes, 8-bit ECC for each 528 bytes is implemented on-chip.
330 µs per page typical.