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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 1502 | On Request | On Request |
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The Toshiba TC58BVG1S3HTA00 is a single 3.3V 2 Gbit NAND E2PROM. It is organized as (2048 + 64) bytes × 64 pages × 2048 blocks, offering a substantial storage capacity of 2,214,592,512 bits.
This serial-type memory device utilizes I/O pins for both address and data input/output, as well as for command inputs. It features a 2112-byte static register that facilitates the transfer of program and read data between the register and the memory cell array in 2112-byte increments.
The TC58BVG1S3HTA00 operates within a voltage range of 2.7V to 3.6V, with a typical operating voltage of 3.3V. It is designed for a temperature range of 0°C to 70°C and has a maximum supply current of 30mA. The component is supplied in a TFSOP package and is designed for surface mounting.
Key specifications include a memory type of EEPROM and FLASH, a density of 2Gb, and 48 terminals. This device is suitable for applications requiring non-volatile data storage.
The device operates from 2.7V to 3.6V, with a typical operating voltage of 3.3V.
The device is offered in a 48-terminal TFSOP (Thin Small Outline Package) for surface mount mounting.
The operating temperature range is 0°C to 70°C.
The device has a density of 2 Gbit (2,214,592,512 bits) organized as (2048 + 64) bytes per page, 64 pages per block, and 2048 blocks.
The device is a combination of EEPROM and NAND Flash memory.
The maximum supply current is 30mA.
Yes, it includes a 2112-byte static register for data operations.