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TC58BVG1S3HBAI6 The Toshiba TC58BVG1S3HBAI6 is a 2GB SLC NAND flash memory component. It features 24nm process technology and is housed in a 6.5x8mm BGA package.
Mfr Part #:

TC58BVG1S3HBAI6

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TC58BVG1S3HBAI6 is a 2GB SLC NAND flash memory component. It features 24nm process technology and is housed in a 6.5x8mm BGA package.
✓ Total Stock: 5,397 pcs

TC58BVG1S3HBAI6 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,397 pcs
On Request
5397 pcs On Request 1 On Request On Request 18+ On Request On Request
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TC58BVG1S3HBAI6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Capacity
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SVHC Present
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TC58BVG1S3HBAI6 Description

Short technical summary and product information.

This Toshiba TC58BVG1S3HBAI6 is a 2GB SLC NAND flash memory device utilizing advanced 24nm process technology. It is designed for reliable data storage and retrieval in various electronic applications.

 

The component comes in a compact 6.5x8mm BGA package, suitable for space-constrained designs. Its SLC (Single-Level Cell) technology offers superior endurance and performance compared to other flash memory types.

 

This memory chip is RoHS3 compliant, indicating adherence to environmental standards. The Moisture Sensitivity Level (MSL) is rated at 1, meaning it has unlimited shelf life under recommended conditions.

TC58BVG1S3HBAI6 Quick Information

Product Type: NAND Flash Memory
Series: TC58BVG1S3
Canonical Name: Toshiba TC58BVG1S3HBAI6 2GB SLC NAND 24nm BGA Memory
Subcategory: NAND Flash

TC58BVG1S3HBAI6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TC58BVG1S3HBAI6 Features

  • SLC NAND flash for high reliability.
  • 2GB storage capacity for embedded applications.
  • 24nm process technology for efficiency.
  • Compact BGA 6.5x8mm package.
  • Single-level cell architecture for endurance.

TC58BVG1S3HBAI6 Applications

  • Used in solid-state drives for data storage.
  • Ideal for industrial embedded systems.
  • Suitable for memory cards and USB drives.
  • Applied in networking equipment buffers.

TC58BVG1S3HBAI6 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the capacity of the TC58BVG1S3HBAI6 memory?

The TC58BVG1S3HBAI6 has a capacity of 2GB.

What type of memory is the TC58BVG1S3HBAI6?

The TC58BVG1S3HBAI6 is an SLC (Single-Level Cell) NAND flash memory.

What is the process technology used in the TC58BVG1S3HBAI6?

The TC58BVG1S3HBAI6 uses 24nm process technology.

What package type is the TC58BVG1S3HBAI6 in?

The TC58BVG1S3HBAI6 is in a BGA package with dimensions of 6.5x8mm.

Is the TC58BVG1S3HBAI6 RoHS compliant?

Yes, the TC58BVG1S3HBAI6 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TC58BVG1S3HBAI6?

The Moisture Sensitivity Level (MSL) for the TC58BVG1S3HBAI6 is 1 Unlimited.

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