| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
455 pcs
|
455 pcs | On Request | 1 | On Request | On Request | 2021+ | On Request | On Request |
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The TC58BVG0S3HTAI0 from Kioxia America, Inc. is a 1 Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). It is organized as 128M x 8 bits and operates with a power supply voltage ranging from 2.7V to 3.6V. This memory device offers a fast access time of 25 ns and a write cycle time of 25 ns.
The TC58BVG0S3HTAI0 is designed for applications requiring high-density non-volatile memory storage, such as solid-state file storage and image file memory. It features integrated ECC logic for error correction and is housed in a 48-TSOP I package suitable for surface mounting.
Key electrical characteristics include a page size of 2112 bytes and a block size of (128K + 4K) bytes. The device supports various modes including Read, Reset, Auto Page Program, and Auto Block Erase. Operating temperature ranges from -40°C to 85°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The TC58BVG0S3HTAI0 operates within a voltage range of 2.7V to 3.6V.
The TC58BVG0S3HTAI0 is available in a 48-TSOP I package, specifically a 48-TFSOP (0.724", 18.40mm Width).
The TC58BVG0S3HTAI0 has an operating temperature range of -40°C to 85°C (TA).
The memory size of the TC58BVG0S3HTAI0 is 1 Gbit.
The TC58BVG0S3HTAI0 is a Non-Volatile FLASH - NAND (SLC) memory.
The access time for the TC58BVG0S3HTAI0 is 25 ns.
The typical auto page program time is 330 µs/page.