SUD50P04-09
Vishay
The Vishay Dale SUD50P04-09 is an N-channel MOSFET designed for power applications. It features a 50A continuous drain current and a -40V drain-source breakdown voltage.
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29 pcs
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29 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
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The Toshiba TC58512FT is a single 3.3 V 512-Mbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM). It is organized as 528 bytes* 32 pages* 4096 blocks, with a 528-byte static register for data transfer.
Key electrical specifications include a power supply voltage range of 2.7 V to 3.6 V and a power dissipation of 0.3 W. The device supports various modes such as Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, and Multi Block Erase, controlled via serial input/output and command control.
This NAND E2PROM features 1E5 program/erase cycles with ECC. Access times are a maximum of 25 µs from cell array to register and a minimum of 50 ns for serial read cycles. The operating temperature range is 0 °C to 70 °C.
The TC58512FT is supplied in a TSOP package, suitable for surface mounting.
The TC58512FT has a capacity of 512-Mbit.
The operating voltage range is 2.7 V to 3.6 V.
The TC58512FT is supplied in a TSOP package.
The operating temperature range is 0 °C to 70 °C.
The TC58512FT can withstand 1E5 program/erase cycles with ECC.
