| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,600 pcs
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22600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Toshiba TC554161AFT-70 is a high-speed, low-power 4,194,304-bit Static Random Access Memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon Gate process technology, this device operates from a single 5V ± 10% power supply.
Key electrical specifications include a maximum access time of 70 ns and an OE access time of 35 ns. The device offers low operating current of 10 mA/MHz (typical) and a very low standby current of 50 µA (maximum) at 5.5V, making it suitable for battery backup applications. It also features power-down capabilities controlled by the Chip Enable (CE) input.
This SRAM is designed for direct TTL compatibility for all inputs and outputs. It operates within a temperature range of 0°C to 70°C and requires a data retention supply voltage between 2V and 5.5V. The TC554161AFT-70 is supplied in a 54-pin TSOP II package suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The nominal operating voltage is 5 V with a tolerance of ±10%.
It is available in a 54-pin TSOP II surface mount package.
The operating temperature range is 0 to 70 °C.
CE access time is 70 ns maximum, OE access time is 35 ns maximum.
Maximum standby current is 50 µA at 5.5 V and 25 µA at 3.0 V.
Data retention voltage is 2 to 5.5 V.
Typical power dissipation is 55 mW/MHz.