TC511002P-12 The Toshiba TC511002P-12 is a 1M x 1 bit Dynamic RAM module utilizing CMOS Silicon gate process technology. It features a 100ns access time and comes in a PDIP18 package.
Mfr Part #:

TC511002P-12

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TC511002P-12 is a 1M x 1 bit Dynamic RAM module utilizing CMOS Silicon gate process technology. It features a 100ns access time and comes in a PDIP18 package.
✓ Total Stock: 18 pcs
$ Price Range: $1.92

TC511002P-12 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
18 pcs
18 pcs On Request 1 On Request On Request On Request On Request On Request

TC511002P-12 Specifications Quick View

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TC511002P-12 Description

Short technical summary and product information.

The Toshiba TC511002P-12 is a new generation dynamic RAM organized as 1,048,576 words by 1 bit. This component utilizes TOSHIBA's CMOS Silicon gate process technology and advanced circuit techniques to provide wide operating margins.

 

Key specifications include a memory type of DRAM, an organization of 1M x 1, an access time of 100ns, and CMOS technology. The component is housed in a PDIP18 package.

 

This DRAM is suitable for various memory applications requiring reliable performance and specific access times. Its CMOS technology ensures efficient operation.

 

Further details regarding operating voltage, temperature, and specific application contexts would typically be found in the product datasheet.

TC511002P-12 Quick Information

Product Type: DRAM
Canonical Name: Toshiba TC511002P-12 DRAM
Subcategory: DRAM

TC511002P-12 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TC511002P-12 Estimated Pricing

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1+ $1.92 $1.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

TC511002P-12 Features

  • Organized as 1M x 1 DRAM memory.
  • Operates with 100ns access time.
  • Utilizes CMOS silicon gate technology.
  • Packaged in PDIP18 case.
  • Designed for dynamic RAM applications.

TC511002P-12 Applications

  • Suitable for high-speed DRAM memory modules.
  • Used in computer memory and data storage systems.
  • Applicable in electronic devices requiring fast access times.
  • Ideal for memory expansion in computing equipment.

TC511002P-12 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the memory type of the TC511002P-12?

The memory type is DRAM.

What is the organization of the TC511002P-12 DRAM?

The organization is 1M x 1.

What is the access time for the TC511002P-12?

The access time is 100ns.

What technology does the TC511002P-12 use?

It uses CMOS technology.

What package is the TC511002P-12 supplied in?

It is supplied in a PDIP18 package.

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