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TBC857C The Toshiba TBC857C is a BJT transistor in a SOT-23 package. It offers a transition frequency of 300MHz and a power dissipation of 150mW.
Mfr Part #:

TBC857C

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TBC857C is a BJT transistor in a SOT-23 package. It offers a transition frequency of 300MHz and a power dissipation of 150mW.
✓ Total Stock: 3,000 pcs
$ Price Range: $1.92

TBC857C Available from 1 distributor

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✓ Non-Authorised
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3,000 pcs
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3000 pcs On Request 1 On Request On Request On Request On Request On Request
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TBC857C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Frequency
Power Dissipation
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TBC857C Description

Short technical summary and product information.

The TBC857C from Toshiba is a Bipolar Junction Transistor (BJT) designed for various electronic applications. It comes in a compact SOT-23 package, suitable for surface-mount designs.

 

Key electrical characteristics include a minimum transition frequency of 300MHz and an absolute maximum power dissipation of 150mW. The device exhibits a typical collector-base voltage of 30V and a collector-emitter voltage of 5.0V. Current gain (hFE) ranges from a minimum of 420 to a maximum of 800, with an SS current gain minimum of 75.

 

This transistor is suitable for applications requiring moderate switching speeds and low power consumption. Its SOT-23 package facilitates integration into space-constrained circuit boards.

TBC857C Quick Information

Product Type: BJT Transistor
Canonical Name: TBC857C
Subcategory: BJT

TBC857C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TBC857C Estimated Pricing

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1+ $1.92 $1.92

Estimated market price range - modelled values for guidance only, not live distributor offers.

TBC857C Features

  • BJT transistor in SOT-23 package.
  • Minimum transition frequency of 300MHz.
  • Absolute maximum power dissipation of 150mW.
  • Typical collector-base voltage of 30V.
  • Static current gain (hFE) from 420 to 800.

TBC857C Applications

  • Suitable for general amplification tasks.
  • Used in low-power switching circuits.
  • Ideal for space-constrained designs.
  • Component for signal processing.

TBC857C FAQs

5 frequently asked questions generated from this part’s specifications.
What is the transition frequency of the TBC857C transistor?

The minimum transition frequency (fT) for the TBC857C is 300MHz.

What is the maximum power dissipation for the TBC857C?

The absolute maximum power dissipation for the TBC857C is 150mW.

What is the package type for the TBC857C transistor?

The TBC857C transistor is supplied in a SOT-23 package.

What is the typical collector-base voltage of the TBC857C?

The typical collector-base voltage (VCB) for the TBC857C is 30V.

What is the minimum static current gain (hFE) for the TBC857C?

The minimum static current gain (hFE) for the TBC857C is 420.

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