| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000,000 pcs
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2000000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba TBC847B,LM is a silicon NPN epitaxial transistor suitable for low-frequency amplifier applications. It is housed in a compact SOT-23-3 surface mount package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 150mA. The device offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V VCE. Its transition frequency (fT) is 100MHz at 10mA collector current and 5V VCE.
The transistor operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 320mW. The storage temperature range is also -55°C to 150°C.
This component is designed for surface mounting, utilizing the SOT-23-3 package, which is common in space-constrained electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.51 | $0.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
It is available in a surface-mount SOT-23-3 package (also TO-236-3, SC-59).
The maximum junction temperature is 150°C.
The maximum DC collector current is 150mA (200mA pulsed).
The minimum hFE is 200 at VCE=5V, IC=2mA, with typical values of 280-290.
The typical transition frequency is 100MHz at VCE=5V, IC=10mA.