| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,026,667 pcs
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6026667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Voltage |
The Toshiba TBAT54C,LM is a Schottky barrier diode array featuring a 1 pair common cathode configuration. It is designed for ultra-high-speed switching applications and is rated with a peak reverse voltage of 35V and a reverse voltage of 30V. The device can handle an average rectified current of 200mA per diode and a peak forward current of 300mA.
With a typical forward voltage of 580mV at 100mA and a fast reverse recovery time of 1.5ns, this diode array is well-suited for low-voltage, high-speed rectification and switching circuits. The power dissipation is rated at 320mW when mounted on an FR4 board, and the junction temperature can reach up to 150°C.
The TBAT54C,LM is housed in a compact SOT-23-3 surface mount package, making it ideal for space-constrained designs. It is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.20 | $0.20 |
| 10+ | $0.12 | $0.12 |
| 100+ | $0.08 | $0.08 |
| 500+ | $0.06 | $0.06 |
| 1,000+ | $0.05 | $0.05 |
| 3,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse voltage (VR) is 30V, with a peak reverse voltage (VRM) of 35V.
The average rectified current (IO) is 200mA per diode.
The typical forward voltage is 580mV at a forward current of 100mA.
The reverse recovery time (trr) is 1.5ns.
It is available in a SOT-23-3 surface mount package (also known as TO-236-3 or SC-59).
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to 150°C.