| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,218,182 pcs
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8218182 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba T2N7002AK,LM is a silicon N-Channel MOS Field-Effect Transistor designed for high-speed switching applications. It offers a drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 200mA at 25°C.
Key electrical characteristics include a low ON-resistance (RDS(on)) of 2.8 Ω typical at 100mA and 10V gate-source voltage, and a gate threshold voltage (Vth) of 1.1V typical. The device also features ESD protected gate and low ON-resistance.
Packaged in a SOT-23-3 surface mount package, the T2N7002AK,LM is suitable for various electronic designs. Its operating temperature range is up to 150°C (TJ).
This MOSFET is well-suited for applications requiring efficient and fast switching performance. The ESD protected gate enhances reliability in handling and operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDSS) is 60 V.
The continuous drain current is 200 mA.
The typical ON-resistance (RDS(on)) is 2.8 Ω at 100mA and 10V.
The T2N7002AK,LM is available in a SOT-23-3 package.
The operating channel temperature is up to 150°C.