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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,874 pcs
|
1874 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
130 pcs
|
130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| Automotive Grade | |
| Bidirectional Channels | |
| Breakdown Voltage | |
| Capacitance @ Frequency | |
| Clamping Voltage | |
| Current | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Line Protection | |
| Reverse Leakage Current | |
| SVHC Present | |
| Supplier Device Package | |
| Type | |
| Voltage |
The SZNUP3105LT3G is a TVS diode from On Semiconductor designed for transient voltage suppression. It features a maximum reverse working voltage of 32 V and a peak power dissipation of 350 W under an 8/20 µs double exponential waveform.
This device provides a nominal breakdown voltage of 35.6 V at 1 mA test current and a maximum clamping voltage of 59 V at 5 A peak pulse current. Reverse leakage current is less than 100 nA at the working voltage.
The SZNUP3105LT3G is housed in a SOT23-3 surface mount package, suitable for automated assembly in circuit protection applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak power dissipation is 350 W under an 8/20 µs double exponential waveform.
The maximum reverse working voltage is 32 V.
The nominal breakdown voltage is 35.6 V at a test current of 1 mA.
The maximum clamping voltage is 59 V at a peak pulse current of 5 A (8/20 µs waveform).
The maximum reverse leakage current is less than 100 nA at a reverse working voltage of 32 V.