SZESD7371HT1G The SZESD7371HT1G is a 5.3V ESD protection diode from onsemi in a SOD-323 package. It features ultra-low capacitance of 0.43 pF and ±8 kV ESD protection.
Mfr Part #:

SZESD7371HT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SZESD7371HT1G is a 5.3V ESD protection diode from onsemi in a SOD-323 package. It features ultra-low capacitance of 0.43 pF and ±8 kV ESD protection.
Total Stock: 22,030 pcs

SZESD7371HT1G Available from 1 distributor

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SZESD7371HT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Applications
Automotive Grade
Capacitance (Maximum)
Capacitance @ Frequency
ESD Protection Voltage (Minimum @ IEC 61000-4-2)
Halogen Free
Junction Temperature Range
Mounting Type
Operating Temperature
Peak Pulse Current Max
Power Line Protection
Reverse Leakage Current (Max)
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Total Power Dissipation
Type
Unidirectional Channels
Voltage

SZESD7371HT1G Description

Short technical summary and product information.

The SZESD7371HT1G is an ESD protection diode from onsemi designed to protect voltage sensitive components from electrostatic discharge and transient voltage events. It features a reverse standoff voltage of 5.3 V and ultra-low typical capacitance of 0.43 pF at 1 MHz, making it suitable for high-speed signal lines.

 

This device provides IEC 61000-4-2 Level 4 ESD protection with ±8 kV contact and air discharge ratings, and can withstand 1000 ESD strikes. It has a maximum reverse leakage current of less than 1 nA and a peak pulse current rating of 3.0 A per IEC 61000-4-5.

 

The SZESD7371HT1G is ideal for RF signal and antenna ESD protection in wireless handsets and terminals. It is surface mount packaged in SC-76, SOD-323 with a maximum total power dissipation of 300 mW and an operating temperature range of -55°C to +150°C.

SZESD7371HT1G Quick Information

Product Type: TVS Diode
Series: SZESD7371
Canonical Name: SZESD7371HT1G ESD Protection Diode
Subcategory: TVS Diodes

SZESD7371HT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SZESD7371HT1G Features

  • Ultra-low capacitance of 0.43 pF typical.
  • IEC 61000-4-2 ESD protection at ±8 kV.
  • Reverse standoff voltage of 5.3 V.
  • Low leakage current less than 1 nA.
  • AEC-Q101 qualified for automotive applications.

SZESD7371HT1G Applications

  • Ideal for RF signal ESD protection circuits.
  • Used in antenna line protection for wireless devices.
  • Suitable for USB 2.0 and USB 3.0 interfaces.
  • Protects near field communication (NFC) circuits.

SZESD7371HT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the reverse standoff voltage of the SZESD7371HT1G?

The reverse standoff voltage is 5.3 V.

What is the typical capacitance of this ESD protection diode?

The typical capacitance is 0.43 pF at 1 MHz.

What ESD protection level does the SZESD7371HT1G provide?

It provides IEC 61000-4-2 Level 4 ESD protection with ±8 kV contact and air discharge ratings.

What is the operating temperature range for this device?

The operating temperature range is -55°C to +150°C.

What package is the SZESD7371HT1G available in?

It is available in a surface mount SC-76, SOD-323 package.

Is the SZESD7371HT1G qualified for automotive applications?

Yes, the SZ prefix indicates it is AEC-Q101 qualified and PPAP capable for automotive applications.

What is the maximum reverse leakage current?

The maximum reverse leakage current is less than 1 nA.

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