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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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22,030 pcs
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22030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Applications | |
| Automotive Grade | |
| Capacitance (Maximum) | |
| Capacitance @ Frequency | |
| ESD Protection Voltage (Minimum @ IEC 61000-4-2) | |
| Halogen Free | |
| Junction Temperature Range | |
| Mounting Type | |
| Operating Temperature | |
| Peak Pulse Current Max | |
| Power Line Protection | |
| Reverse Leakage Current (Max) | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Type | |
| Unidirectional Channels | |
| Voltage |
The SZESD7371HT1G is an ESD protection diode from onsemi designed to protect voltage sensitive components from electrostatic discharge and transient voltage events. It features a reverse standoff voltage of 5.3 V and ultra-low typical capacitance of 0.43 pF at 1 MHz, making it suitable for high-speed signal lines.
This device provides IEC 61000-4-2 Level 4 ESD protection with ±8 kV contact and air discharge ratings, and can withstand 1000 ESD strikes. It has a maximum reverse leakage current of less than 1 nA and a peak pulse current rating of 3.0 A per IEC 61000-4-5.
The SZESD7371HT1G is ideal for RF signal and antenna ESD protection in wireless handsets and terminals. It is surface mount packaged in SC-76, SOD-323 with a maximum total power dissipation of 300 mW and an operating temperature range of -55°C to +150°C.
The reverse standoff voltage is 5.3 V.
The typical capacitance is 0.43 pF at 1 MHz.
It provides IEC 61000-4-2 Level 4 ESD protection with ±8 kV contact and air discharge ratings.
The operating temperature range is -55°C to +150°C.
It is available in a surface mount SC-76, SOD-323 package.
Yes, the SZ prefix indicates it is AEC-Q101 qualified and PPAP capable for automotive applications.
The maximum reverse leakage current is less than 1 nA.