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SVF4N60DTR The SVF4N60DTR is an N-channel enhancement mode power MOSFET from SILAN. It offers a 600V drain-source breakdown voltage and a 4A continuous drain current.
Mfr Part #:

SVF4N60DTR

Available from 1 distributors
Mfr Name: Silan
Silan
The SVF4N60DTR is an N-channel enhancement mode power MOSFET from SILAN. It offers a 600V drain-source breakdown voltage and a 4A continuous drain current.
✓ Total Stock: 3,367 pcs

SVF4N60DTR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
3,367 pcs
On Request
3367 pcs On Request 1 On Request On Request 2013+ On Request On Request
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SVF4N60DTR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Mounting Type
Tape & Reel
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SVF4N60DTR Description

Short technical summary and product information.

The SVF4N60DTR is an N-channel enhancement mode power MOSFET produced using Silan's proprietary F-Cell™ structure VDMOS technology. This device is designed for applications requiring efficient power switching, such as AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.

 

Key electrical characteristics include a drain-source breakdown voltage of 600V and a continuous drain current of 4A at 25°C. The typical on-state resistance (RDS(on)) is 2.0Ω at a gate-source voltage of 10V. It also features low gate charge and fast switching capabilities, with a total gate charge of 8.16nC.

 

The SVF4N60DTR is housed in a TO-252-2L package, suitable for surface mounting. The operating junction temperature range is -55°C to +150°C, and the storage temperature range is also -55°C to +150°C. Thermal resistance from junction to case is 1.61°C/W.

SVF4N60DTR Quick Information

Product Type: MOSFET
Series: SVF4N60D
Canonical Name: SVF4N60DTR N-Channel MOSFET
Subcategory: N-Channel

SVF4N60DTR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SVF4N60DTR Features

  • 600V drain-source breakdown voltage.
  • 4A continuous drain current.
  • 2.0Ω typical on-state resistance.
  • TO-252-2L surface mount package.
  • Fast switching performance.

SVF4N60DTR Applications

  • Used in switch-mode power supplies.
  • Ideal for power factor correction circuits.
  • Suitable for motor control applications.
  • Used in high-voltage DC-DC converters.

SVF4N60DTR FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SVF4N60DTR?

The drain-source breakdown voltage is 600V.

What is the continuous drain current for the SVF4N60DTR?

The continuous drain current is 4A at 25°C.

What is the typical on-state resistance (RDS(on))?

The typical on-state resistance is 2.0Ω at VGS=10V and ID=2A.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package type is the SVF4N60DTR supplied in?

The SVF4N60DTR is supplied in a TO-252-2L package.

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