| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation |
The SVF12N65F from SILAN is an N-channel enhancement mode power MOSFET designed using proprietary F-CellTM structure VDMOS technology. This technology is tailored to minimize on-state resistance and provide superior switching performance.
Key electrical characteristics include a drain-source voltage rating of 650V, a continuous drain current of 12A at 25°C, and a typical on-state resistance (Rds(on)) of 0.64Ω at Vgs=10V. It also offers a pulsed drain current of 48A and a maximum power dissipation of 51W at 25°C.
The device operates within a junction temperature range of -55°C to +150°C and has a storage temperature range of -55°C to +150°C. Thermal resistance from junction to case is 2.44°C/W, and junction to ambient is 62.5°C/W.
The SVF12N65F is supplied in a TO-220F-3 package suitable for through-hole mounting. It is used in applications such as AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the SVF12N65F is 650V.
The typical on-resistance (Rds(on)) of the SVF12N65F is 0.64Ω at a gate-source voltage of 10V and a drain current of 6.0A.
The SVF12N65F is supplied in a TO-220F-3 package.
The operating junction temperature range for the SVF12N65F is -55°C to +150°C.
The RoHS status for the SVF12N65F is RoHS3 Compliant.