Mfr Part #:

SVF10N65F

Mfr Name: Silan

The SILAN SVF10N65F is an N-channel enhancement mode power MOSFET designed for high-performance applications. It offers a 650V breakdown voltage and a 10A continuous drain current.

✓ Total Stock: 8,500 pcs

SVF10N65F Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	8,500 pcs On Request	8500 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SVF10N65F Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Silan
Input Capacitance	1143.2pF
Mounting Type	Through Hole
Package / Case	TO-220-3L / TO-220F-3L
SVHC Present	Not Present

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SVF10N65F Description

Short technical summary and product information.

The SVF10N65F from SILAN is an N-channel enhancement mode power MOSFET utilizing F-CellTM structure VDMOS technology. This device is engineered for efficiency and reliability, featuring a 650V drain-source breakdown voltage and a 10A continuous drain current at 25°C.

Key electrical characteristics include a typical on-state resistance (RDS(on)) of 0.8Ω at VGS=10V, low gate charge (Qg), and low reverse transfer capacitance (Crss). It also boasts fast switching speeds with typical turn-on delay time of 40ns and turn-off fall time of 34.8ns, along with improved dv/dt capability.

Designed for demanding applications, the SVF10N65F is suitable for AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers. Its robust construction and performance parameters ensure stable operation in various power conversion circuits.

Available in TO-220-3L and TO-220F-3L packages, this MOSFET is designed for through-hole mounting and is supplied in tubes. The operating junction temperature ranges from -55°C to +150°C.

SVF10N65F Quick Information

Product Type: MOSFET

Series: SVF10N65F

Canonical Name: SVF10N65F N-Channel MOSFET

Subcategory: N-Channel Power MOSFET

SVF10N65F Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SVF10N65F Features

650V drain-source breakdown voltage.
10A continuous drain current.
0.8Ω typical on-state resistance.
Fast switching performance.
Suitable for power supplies and motor drivers.

SVF10N65F Applications

Switching power supplies and converters.
Motor control and inverter circuits.
LED lighting and battery charging systems.
General purpose power switching applications.

SVF10N65F FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the SVF10N65F?

The maximum drain-source breakdown voltage (BVDSS) is 650V.

What is the continuous drain current rating of the SVF10N65F?

The continuous drain current (ID) is rated at 10A at 25°C and 5.5A at 100°C.

What is the typical on-state resistance (RDS(on)) for the SVF10N65F?

The typical static drain-source on-state resistance (RDS(on)) is 0.8Ω when VGS is 10V and ID is 5.0A.

What are the available package types for the SVF10N65F?

The SVF10N65F is available in TO-220-3L and TO-220F-3L packages.

What is the operating junction temperature range for this MOSFET?

The operating junction temperature (TJ) ranges from -55°C to +150°C.