| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,520 pcs
|
13520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,751 pcs
|
1751 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SVD5867NLT4G is a single N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for applications requiring low RDS(on) and high current capability, featuring a drain-to-source voltage of 60V and a continuous drain current of 22A at 25°C case temperature.
Key electrical characteristics include a maximum Rds(on) of 39mOhm at 11A and 10V gate-source voltage, and a gate threshold voltage of 2.5V at 250µA. The MOSFET has an input capacitance of 675pF at 25V and a gate charge of 15nC at 10V.
This device operates within a junction temperature range of -55°C to 175°C. It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for various board-level implementations. The power dissipation is rated at 43W (Tc) and 3.3W (Ta).
The SVD5867NLT4G is AEC-Q101 qualified and PPAP capable, and is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The continuous drain current is 22A at a case temperature of 25°C.
The Rds(on) is a maximum of 39mOhm when measured at 11A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
The SVD5867NLT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
Yes, the SVD5867NLT4G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.