| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,597 pcs
|
2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor SVD5806NT4G is a high-performance N-Channel MOSFET designed for various power switching applications. It offers a drain-source voltage (Vdss) of 40V and can handle a continuous drain current (Id) of up to 33A at a case temperature of Tc.
Key electrical characteristics include a low on-resistance (Rds On) of 19mOhm at 15A and 10V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. The MOSFET has an input capacitance (Ciss) of 860pF at 25V and a gate charge (Qg) of 38nC at 10V. The maximum gate-source voltage is ±20V.
This device is housed in a surface-mount DPAK (TO-252-3) package, also known as SC-63, facilitating efficient board space utilization. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 40W (Tc). The technology employed is MOSFET (Metal Oxide).
The SVD5806NT4G is RoHS3 compliant and has an MSL rating of 1, indicating unlimited shelf life under recommended storage conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package is DPAK.
-55°C to 175°C (junction).
33A at Tc.
19mOhm maximum at 15A, 10V.
2.5V maximum at 250µA.
38nC at 10V.