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SVD2955T4G The On Semiconductor SVD2955T4G is a P-Channel MOSFET designed for high-speed switching applications. It features a -60V drain-source voltage and -12A continuous drain current.
Mfr Part #:

SVD2955T4G

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SVD2955T4G is a P-Channel MOSFET designed for high-speed switching applications. It features a -60V drain-source voltage and -12A continuous drain current.
✓ Total Stock: 70,207 pcs
$ Price Range: $2.56

SVD2955T4G Available from 7 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SVD2955T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SVD2955T4G Description

Short technical summary and product information.

The SVD2955T4G from On Semiconductor is a P-Channel Power MOSFET designed for low-voltage, high-speed switching applications. It is engineered to withstand high energy in avalanche and commutation modes, offering an additional safety margin against voltage transients.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of -60V and a continuous drain current (Id) of -12A at 25°C ambient temperature. The device has a maximum power dissipation of 55W (Tj) and a low static drain-source on-resistance (Rds(on)) of 180mOhm at 6A and 10V gate-source voltage.

 

This MOSFET operates within a temperature range of -55°C to 175°C. It is housed in a surface-mount DPAK package (TO-252-3, DPak (2 Leads + Tab), SC-63), making it suitable for various power supply, converter, and motor control designs where space and thermal performance are critical.

SVD2955T4G Quick Information

Product Type: MOSFET
Canonical Name: SVD2955T4G P-Channel MOSFET
Subcategory: P-Channel

SVD2955T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SVD2955T4G Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SVD2955T4G Features

  • P-Channel MOSFET for high-speed switching.
  • -60V drain-source voltage rating.
  • -12A continuous drain current capability.
  • 55W maximum power dissipation.
  • Surface mount DPAK package.

SVD2955T4G Applications

  • Suitable for power supply applications.
  • Used in DC-DC converters.
  • Ideal for power motor controls.
  • Well-suited for bridge circuits.

SVD2955T4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the SVD2955T4G?

The operating and storage junction temperature range is -55°C to 175°C.

What is the maximum drain-source voltage for the SVD2955T4G?

The maximum drain-to-source voltage (Vdss) is -60V.

What is the continuous drain current rating?

The maximum continuous drain current at Ta=25°C is -12A.

What is the on-resistance of this MOSFET?

The static drain-source on-resistance (Rds(on)) is 180mOhm maximum at Vgs=10V and Id=6A.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.

What package is the SVD2955T4G available in?

The SVD2955T4G comes in a TO-252-3 (DPAK) surface-mount package.

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