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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
172,500 pcs
|
172500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Rds(on) max. | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SVD14N03RT4G is an N-channel enhancement mode MOSFET manufactured by On Semiconductor (onsemi). It is designed for low voltage switching and power management applications. The device features a maximum drain-source voltage (Vdss) of 25 Vdc and a continuous drain current rating of 2.5 A as indicated in the product title.
The on-resistance is specified at a maximum of 95 mOhm when tested at 5 A drain current and 10 V gate-source voltage. The maximum gate threshold voltage (Vgs(th)) is 2 V at 250 µA, and the gate-source voltage is limited to ±20 Vdc. These parameters make it suitable for efficient switching in low-power circuits.
The MOSFET is housed in a DPAK (TO-252) surface mount package, which is commonly used for automated assembly and provides good thermal performance for moderate power levels. It is ideal for applications such as load switches, DC-DC converters, and battery protection circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 25 Vdc.
The maximum gate threshold voltage (Vgs(th)) is 2V at 250µA.
The maximum on-resistance (Rds(on)) is 95mOhm at 5A, 10V.
The maximum gate-source voltage (Vgs) is ±20 Vdc.