| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,360 pcs
|
17360 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The On Semiconductor SVC6H890N is an N-Channel power MOSFET with a drain-to-source voltage (Vdss) of 80V. It is designed for high-power switching applications and is rated for a continuous drain current (Id) of 620A at 25°C (Ta).
This MOSFET exhibits a low on-resistance (Rds On) of 0.53mOhm at 50A and 10V gate-source voltage (Vgs). The device operates with a gate drive voltage of 10V and has a maximum Vgs of ±20V. Its threshold voltage (Vgs(th)) is 3.7V at 1.4mA.
Part of the Automotive AEC-Q101 series, the SVC6H890N is suitable for automotive systems and other high-performance power electronics requiring robust thermal management and high current handling. The operating temperature range is -55°C to 175°C (TJ). It is supplied as a die for surface mounting.
Key electrical characteristics include an input capacitance (Ciss) of 31000 pF at 48V and a total gate charge (Qg) of 485 nC at 10V. The device is rated for 175°C operating temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
Die (surface mount).
-55°C to 175°C junction temperature.
620A at 25°C.
0.53 mOhm at 50A, 10V.
485 nC at 10V.
31 nF at 48V, 1 MHz.