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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Maximum Repetitive Reverse Voltage | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The SURD8330T4G-VF01 is a general purpose fast recovery diode manufactured by ON Semiconductor. It is designed for applications requiring efficient rectification with fast switching performance. The diode has a maximum repetitive reverse voltage of 300V and an average rectified current rating of 3A.
Key electrical characteristics include a maximum forward voltage of 1.15V at 3A forward current and a reverse recovery time of 50ns, classifying it as a fast recovery diode with recovery times less than 500ns. The device operates over a junction temperature range of -55°C to 175°C.
The diode is housed in a DPAK (TO-252) surface mount package, which is suitable for automated assembly processes. The package is also known as TO-252-3, DPak (2 Leads + Tab), SC-63. The surface mount design allows for compact PCB layouts and efficient thermal management.
The SURD8330T4G-VF01 is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). It is suitable for use in power supplies, converters, and other general purpose rectification circuits where fast recovery is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.11 | $1.11 |
| 10+ | $0.69 | $0.69 |
| 100+ | $0.45 | $0.45 |
| 500+ | $0.35 | $0.35 |
| 1,000+ | $0.32 | $0.32 |
| 2,500+ | $0.25 | $0.25 |
| 5,000+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
300V.
3A.
1.15V maximum at 3A forward current.
50ns.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
-55°C to 175°C.
Fast Recovery =< 500ns, > 200mA (Io).