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2,039 pcs
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2039 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUP90N10-8m8P from VBsemi is an N-Channel Power MOSFET designed for high-performance applications. It features a Drain-Source Voltage (Vds) of 100V and a low Drain-Source On-State Resistance (Rds(on)) of 0.0088 Ohms at a Gate-Source Voltage (Vgs) of 10V.
This MOSFET boasts a continuous drain current (Id) of 90A, making it suitable for demanding power applications. It operates within a junction temperature range of -55°C to 175°C and is housed in a TO-263 package, suitable for surface-mount designs.
Key electrical characteristics include a gate threshold voltage between 2.5V and 4.5V, and a gate-body leakage of ±250 nA. The device is also tested for 100% Rg and UIS, indicating robust performance and reliability.
Applications include power supplies, secondary synchronous rectification, and primary switching in industrial settings. Its TrenchFET technology ensures efficient power handling.
The maximum drain-source voltage is 100V.
The continuous drain current is 90A at 25°C case temperature.
The typical on-resistance is 8.8mOhm at VGS=10V.
It comes in a TO-263 (D2PAK) surface-mount package.
The operating junction temperature range is -55°C to 175°C.
The maximum power dissipation is 300W at 25°C case temperature.
Typical rise time is 17ns, fall time is 9ns, and turn-off delay time is 34ns.