BC847BS.115
NXP Semiconductors
The BC847BS.115 is a bipolar transistor array from NXP Semiconductors. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,525 pcs
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2525 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| SVHC Present |
The Vishay Dale SUP90N08-8M2P-E3 is an N-Channel Power MOSFET featuring TrenchFET technology. It is rated for a 75V drain-source voltage and a continuous drain current of up to 90A at 25°C case temperature.
This MOSFET exhibits a low on-state resistance of 8.2 mΩ typical at VGS = 10V, making it suitable for applications requiring efficient power handling. The operating junction temperature range is from -55°C to 175°C.
Packaged in a TO-220AB through-hole configuration, the SUP90N08-8M2P-E3 is designed for applications such as secondary synchronous rectification in power supplies and general industrial use. It is RoHS compliant and has a Moisture Sensitivity Level of 1.
Key electrical characteristics include a gate threshold voltage between 2.8V and 4.8V, and a gate-source voltage rating of ±20V. Thermal performance is supported by a junction-to-case thermal resistance of 1°C/W.
The drain-source breakdown voltage is 75V.
The typical on-state resistance is 8.2 mΩ at VGS = 10 V.
The maximum continuous drain current is 90A at TC = 25 °C.
The operating junction and storage temperature range is -55°C to 175°C.
The SUP90N08-8M2P-E3 is in a TO-220AB package.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.