| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,065 pcs
|
2065 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUP90N08-7M7P-E3 from Vishay is a high-performance N-Channel MOSFET belonging to the TrenchFET® series. It is designed for demanding power applications requiring robust performance.
Key electrical specifications include a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) of 90A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 7.7mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer and minimizing conduction losses. The gate threshold voltage (Vgs(th)) is 4.5V at 250µA, and the maximum gate-source voltage is ±20V.
With a maximum power dissipation of 208.3W at the case temperature (Tc), this MOSFET is suitable for high-power designs. It operates within a wide temperature range of -55°C to 150°C (TJ).
The component is packaged in a TO-220-3 (TO-220AB) case and utilizes a through-hole mounting type, making it suitable for various assembly processes.
75V.
TO-220-3 through-hole package.
-55°C to 150°C.
105 nC at 10V.
4250 pF at 30V.
7.7 mOhm at 20A, 10V.
N-Channel.