| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SUP90N04-3M3P-GE3 is an N-Channel MOSFET from Vishay Dale designed for high-efficiency power switching. It has a maximum drain-source voltage of 40V and a continuous drain current of 90A at case temperature. The on-resistance is typically 3.3mΩ maximum at a gate-source voltage of 10V and drain current of 22A, enabling low conduction losses.
The device features a gate threshold voltage of 2.5V maximum at 250µA, and can be driven with 4.5V or 10V logic levels. Input capacitance is 5286pF at Vds=20V, and total gate charge is 131nC at Vgs=10V, which supports moderate switching speeds. The maximum gate-source voltage is ±20V.
The MOSFET is housed in a TO-220AB through-hole package, suitable for PCB mounting with adequate heat sinking. It is commonly used in DC-DC converters, motor drives, and power management circuits where low voltage and high current are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
90 A at case temperature.
3.3 mΩ maximum at Id=22A, Vgs=10V.
2.5 V maximum at Id=250µA.
5286 pF at Vds=20V.
131 nC at Vgs=10V.
±20 V.