| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32,800 pcs
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32800 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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The Vishay Dale SUP90N04-3m3P is an N-Channel MOSFET characterized by its vertical DMOS structure. It is designed for both linear and switching applications, operating accurately across a temperature range of -55 °C to +125 °C.
Key electrical specifications include a typical Drain-Source On-State Resistance of 0.0027 Ω at VGS = 10 V and ID = 22 A, and 0.0034 Ω at VGS = 4.5 V and ID = 20 A. The device features a typical Gate Threshold Voltage of 1.3 V and a typical Forward Transconductance of 169 S at VDS = 15 V and ID = 20 A. Dynamic characteristics include typical capacitances such as Ciss of 5286 pF, Coss of 705 pF, and Crss of 283 pF, along with a total gate charge (Qg) of 87 nC.
This MOSFET is suitable for applications requiring a 40V drain-source breakdown voltage. The SPICE model provided describes typical electrical characteristics, optimized for accuracy over the specified temperature range.
The typical Gate Threshold Voltage (Vgs(th)) for the SUP90N04-3m3P is 1.3 V.
The typical Drain-Source On-State Resistance (Rds(on)) is 0.0027 Ω when the gate-source voltage is 10 V and the drain current is 22 A.
The typical Forward Transconductance (gfs) is 169 S, measured at a drain-source voltage of 15 V and a drain current of 20 A.
This MOSFET is accurate over the temperature range of -55 °C to +125 °C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.