| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,020 pcs
|
41020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUP90140E-GE3 is an N-Channel power MOSFET designed for various power supply applications, including uninterruptible power supplies and AC/DC switch-mode power supplies. It features a maximum junction temperature of 175°C and a continuous drain current of 90A at 25°C case temperature.
Key electrical characteristics include a drain-source breakdown voltage of 200V and a low Rds On of 17mOhm at 30A and 10V Vgs. The gate charge is 96nC maximum at 10V Vgs, and the input capacitance is 4132pF maximum at 100V Vds. The gate threshold voltage is 4V maximum at 250µA.
This MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. It offers a maximum power dissipation of 375W at 25°C case temperature and operates within a temperature range of -55°C to 175°C.
Applications include DC/DC converters, motor drives, DC/AC inverters, solar micro-inverters, and Class D audio amplifiers. The device is RoHS3 compliant and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The junction operating temperature range is -55°C to 175°C.
The maximum continuous drain current is 90A at TC=25°C.
The maximum on-resistance is 17mOhm at ID=30A and VGS=10V.
It is delivered in a TO-220AB (TO-220-3) through-hole package.
The drain-source breakdown voltage is 200V minimum at VGS=0V, ID=250µA.
The maximum gate threshold voltage is 4V at VDS=VGS, ID=250µA.
The maximum power dissipation is 375W at TC=25°C.