| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,010 pcs
|
2010 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Vishay Dale, part number SUP85N10-10-GE3, offers a robust solution for power switching applications. It features a high drain-source breakdown voltage of 100V and a continuous drain current capability of 85A at 25°C case temperature.
The MOSFET exhibits a low on-state resistance of 10.5mΩ maximum at 30A and 10V gate-source voltage, contributing to efficient power transfer. With a gate-source voltage rating of ±20V and a gate threshold voltage of 3V maximum, it provides flexibility in drive circuitry.
Designed for through-hole mounting, the SUP85N10-10-GE3 comes in a standard TO-220-3 package. It operates across a wide temperature range from -55°C to 175°C (TJ), making it suitable for demanding environments. The device also boasts a maximum power dissipation of 250W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is offered in a TO-220-3 through-hole package.
The junction temperature operating range is from -55°C to 175°C.
Minimum 100V at VGS = 0V, ID = 250 μA.
Maximum 3V at VDS = VGS, ID = 250 µA.
Maximum 10.5mΩ at ID = 30A, VGS = 10V.
85A at case temperature 25°C.
250W at case temperature 25°C and 3.75W at ambient temperature 25°C.