| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,420 pcs
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1420 pcs | On Request | 1 | On Request | On Request | 1908+ | On Request | 2026-06-03 08:15:28 |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUP85N10-10-E3 is a robust N-Channel Power MOSFET designed for demanding applications. It offers a 100V drain-source breakdown voltage and a continuous drain current capability of 85A at 25°C case temperature.
Key electrical characteristics include a low on-state resistance (Rds(on)) of 10.5mOhm at 30A and 10V Vgs, ensuring efficient power transfer. The device operates across a wide temperature range from -55°C to 175°C, making it suitable for various environmental conditions.
Packaged in a TO-220AB through-hole package, the SUP85N10-10-E3 is designed for easy integration into standard PCB layouts. Its TrenchFET power MOSFET technology contributes to its high performance and reliability in power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 100V.
It utilizes a TO-220AB three-lead through-hole package.
The device operates reliably between -55°C and 175°C.
The continuous drain current is 85A at a case temperature of 25°C.
Maximum power dissipation reaches 250W when mounted to a heatsink at 25°C case temperature.
A 10V gate drive achieves the minimum on-state resistance of 10.5mΩ.