SUP85N03-04P-E3 The Vishay SUP85N03-04P-E3 is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 85A. It features a low Rds On of 4.3mOhm at 30A, 10V.
Mfr Part #:

SUP85N03-04P-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SUP85N03-04P-E3 is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 85A. It features a low Rds On of 4.3mOhm at 30A, 10V.
✓ Total Stock: 48,506 pcs
$ Price Range: $2.56

SUP85N03-04P-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
48,506 pcs
48506 pcs On Request 1 On Request On Request 19+ On Request On Request

SUP85N03-04P-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SUP85N03-04P-E3 Description

Short technical summary and product information.

The Vishay SUP85N03-04P-E3 is a single N-Channel MOSFET designed for power applications. It offers a drain-source breakdown voltage of 30V and can handle a continuous drain current of 85A at case temperature.

 

Key electrical characteristics include a maximum drain-source resistance (Rds On) of 4.3mOhm at 30A and 10V gate-source voltage. The gate charge (Qg) is 90nC maximum at 10V, and the gate-source voltage maximum is ±20V. The threshold voltage (Vgs(th)) is 3V maximum at 250µA.

 

This MOSFET is housed in a TO-220AB package with a TO-220-3 configuration and is designed for through-hole mounting. It operates across a wide temperature range from -55°C to 175°C (TJ). The maximum power dissipation is rated at 166W (Tc) or 3.75W (Ta).

 

This component utilizes MOSFET (Metal Oxide) technology and belongs to the TrenchFET® SUP series.

SUP85N03-04P-E3 Quick Information

Product Type: MOSFET
Series: SUP
Canonical Name: Vishay Dale SUP85N03-04P-E3 N-Channel MOSFET
Subcategory: Single

SUP85N03-04P-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SUP85N03-04P-E3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SUP85N03-04P-E3 Features

  • N-Channel MOSFET technology.
  • 30V drain-source breakdown voltage.
  • 85A continuous drain current.
  • Low Rds On of 4.3mOhm.
  • TO-220AB through-hole package.

SUP85N03-04P-E3 Applications

  • Used in DC-DC converter circuits
  • Suitable for motor drive applications
  • Ideal for power management systems
  • Applied in battery protection circuits
  • Used in load switching applications

SUP85N03-04P-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 30V.

What is the continuous drain current?

The continuous drain current is 85A at case temperature.

What is the maximum Rds On?

The maximum Rds On is 4.3mOhm at 30A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is used?

The component is supplied in a TO-220AB package, specifically TO-220-3.

Is this RoHS compliant?

This component is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

Home
Account

Categories