| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,000 pcs
|
35000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The SUP70N06-14 is an N-Channel MOSFET designed for power applications. It boasts a 60V drain-source breakdown voltage and can handle a continuous drain current of up to 70A at 25°C case temperature, with a reduced current of 49A at 100°C case temperature. The device exhibits a low typical on-state resistance (Rds(on)) of 0.014Ω at 10V gate-source voltage and 30A drain current, and 0.028Ω at 175°C.
Key electrical parameters include a gate threshold voltage typically between 2V and 4V, with a nominal value of 3V. The MOSFET supports a gate-source voltage of up to ±20V. Dynamic characteristics such as input capacitance (Ciss) are around 2400pF, output capacitance (Coss) at 490pF, and reverse transfer capacitance (Crss) at 130pF. Total gate charge (Qg) is typically 70nC.
Available in TO-220AB and TO-263 packages, the SUP70N06-14 is suitable for through-hole and surface mount applications respectively. It operates within a junction and storage temperature range of -55°C to 175°C. The device also includes a source-drain diode with a typical forward voltage of 1.4V at 70A.
The drain-source breakdown voltage is 60V.
The continuous drain current at 25°C is 70A.
The typical on-state resistance is 0.014Ω at VGS = 10V and ID = 30A.
The operating junction and storage temperature range is -55°C to 175°C.
The SUP70N06-14 is available in TO-220AB and TO-263 packages.
The gate threshold voltage is typically 3V, with a minimum of 2V and a maximum of 4V.
The typical input capacitance is 2400pF.