| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,770 pcs
|
2770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUP70101EL-GE3 is a P-Channel MOSFET featuring TrenchFET technology for low thermal resistance and minimized conduction losses. It is rated for a maximum junction temperature of 175°C and offers a drain-source voltage of 100V.
Key electrical specifications include a maximum continuous drain current of 120A at 25°C case temperature and a low on-resistance of 0.0101 Ohms at VGS = -10V. The gate threshold voltage is a maximum of 2.5V at 250µA. This MOSFET is compatible with logic-level gate driving.
Packaged in a TO-220AB through-hole package, the SUP70101EL-GE3 is suitable for applications such as battery protection, motor drive control, and load switching. It operates within a temperature range of -55°C to +175°C.
This device is lead (Pb)-free and halogen-free, meeting stringent environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -100V at VGS=0V and ID=-250μA.
The package is TO-220AB, a through-hole mounting type.
The operating junction temperature range is -55°C to 175°C.
The maximum continuous drain current is -120A at 25°C case temperature, derated to -78A at 175°C junction temperature.
The typical gate charge is 125 nC at VGS=10V.
The maximum power dissipation is 375W at 25°C case temperature, derated to 125W at 125°C.
The maximum input capacitance is 7000 pF at VDS=-50V.