| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
990 pcs
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990 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUP60N10-16L-E3 is an N-Channel Power MOSFET with a 100V drain-source breakdown voltage. It is designed for applications requiring high current handling, rated for 60A continuous drain current at 25°C case temperature.
Key electrical specifications include a maximum on-state resistance (Rds On) of 16mΩ at 30A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 3V maximum at 250µA. The MOSFET features a maximum power dissipation of 150W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C.
This component utilizes TrenchFET technology and is optimized for PWM applications. It is housed in a TO-220AB package, suitable for through-hole mounting. The input capacitance (Ciss) is 3820 pF, and the total gate charge (Qg) is a maximum of 110 nC.
Applications include DC/DC primary side switching. The device operates within a gate-source voltage range of ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 100V at VGS=0V and ID=250μA.
The maximum continuous drain current is 60A at case temperature 25°C.
The maximum on-resistance is 16mΩ at ID=30A and VGS=10V, and 18mΩ at ID=20A and VGS=4.5V.
The operating junction temperature range is -55°C to 175°C.
It is available in a TO-220-3 (TO-220AB) through-hole package.
The maximum gate threshold voltage is 3V at VDS=VGS and ID=250μA.
The maximum power dissipation is 150W at case temperature 25°C.