| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,686 pcs
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3686 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Vishay Dale SUP60N10-16L is a TrenchFET® Power MOSFET featuring an N-Channel configuration. It is rated for a 100V drain-source breakdown voltage and a continuous drain current of up to 60A at 25°C case temperature. This MOSFET is optimized for PWM applications and can operate at junction temperatures up to 175°C.
Key electrical characteristics include a low on-state resistance, with rDS(on) as low as 0.016 Ω at VGS = 10V and ID = 30A. Dynamic parameters such as input capacitance (Ciss) are 3820 pF, output capacitance (Coss) are 450 pF, and reverse transfer capacitance (Crss) are 210 pF.
The device comes in a TO-220AB package, suitable for through-hole mounting. Its high junction temperature capability and PWM optimization make it suitable for applications like DC/DC primary side switching.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 1.3V.
The maximum continuous drain current at 25°C is 60A.
The maximum continuous drain current at 125°C is 35A.
The typical drain-source on-state resistance is 0.016 Ohms.
The typical drain-source on-state resistance is 0.018 Ohms.
The maximum operating junction temperature is 175°C.