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6,066 pcs
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6066 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Vishay SUP60N06-18-E3 is an N-Channel MOSFET designed for power switching applications. It features a drain-to-source breakdown voltage of 60V and can handle a continuous drain current of 60A.
The MOSFET exhibits a low drain-to-source on-resistance of 18 mΩ, contributing to efficient power transfer. Key electrical parameters include a gate-to-source voltage rating of 20V and a maximum power dissipation of 120W. The operating temperature range spans from -55°C to 175°C.
Packaged in a standard TO-220AB through-hole configuration, the SUP60N06-18-E3 is suitable for various electronic designs. Its dimensions are 9.01mm in height, 10.41mm in length, and 4.7mm in width, with a weight of approximately 6g.
This component is identified by its MPN SUP60N06-18-E3 and manufactured by Vishay. It is classified under discrete semiconductor products as a transistor, specifically an N-Channel MOSFET.
60V.
60A.
18mΩ.
-55°C to +175°C.
TO-220AB.
RoHS3 Compliant.
120W.