| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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146 pcs
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146 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SUP60N06-12P-E3 from Vishay/Siliconix is an N-Channel MOSFET designed for power applications. It offers a robust 60V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of 60A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 12mOhm when driven at 10V with a 30A drain current. The gate threshold voltage (Vgs(th)) is a maximum of 4.5V at 250µA. It also features a maximum gate charge (Qg) of 55nC at 10V and a maximum gate-to-source voltage (Vgs) of ±20V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in a TO-220AB package, suitable for through-hole mounting. The device belongs to the TrenchFET® series, indicating advanced power MOSFET technology for improved performance and efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 60A at 25°C (Tc).
The maximum Rds On is 12mOhm at 30A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C.
The SUP60N06-12P-E3 is supplied in a TO-220AB package.