| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32,500 pcs
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32500 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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The SUP57N20-33 is an N-Channel enhancement-mode MOSFET designed for high-efficiency power conversion applications. It is rated for a drain-source breakdown voltage of 200V and can operate over a junction temperature range of -55°C to 175°C.
Key electrical characteristics include a typical on-state drain current of 185A at VGS = 10V, a typical on-state resistance of 0.023Ω at VGS = 10V and ID = 30A, and a typical gate threshold voltage of 3.2V. The device also features low gate charge (Qg typ 90nC) and fast switching performance with a typical turn-on delay time of 24ns.
The MOSFET is offered in a surface mount package, making it suitable for automated assembly processes. It is commonly used in switching power supplies, DC-DC converters, and motor control circuits where high efficiency and reliability are required.
The minimum drain-source breakdown voltage is 200V.
The typical on-state resistance is 0.023Ω at VGS = 10V and ID = 30A.
The operating junction temperature range is -55°C to 175°C.
The typical gate threshold voltage is 3.2V at VDS = VGS and ID = 250 μA.
The typical input capacitance is 5100 pF at VDS = 25V, VGS = 0V, and f = 1 MHz.