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4,380 pcs
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4380 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The SUP53P06-20-E3 is a P-Channel enhancement-mode MOSFET manufactured by VBsemi. It is designed for high-efficiency power management applications requiring a -60V drain-source breakdown voltage and a continuous drain current of -53A at TC=25°C. The device features a low maximum on-state resistance of 0.0195Ω at VGS=-10V and 0.025Ω at VGS=-4.5V, enabling low conduction losses.
The gate-source threshold voltage ranges from -1V to -3V, and the typical gate charge is 76nC, facilitating fast switching. The MOSFET is characterized for surface mounting on 1" x 1" FR4 boards, with a maximum drain current of 9.2A at TA=25°C under those conditions. Pulse testing is performed with a pulse width ≤300μs and duty cycle ≤2%.
This component is suitable for load switching, power supply circuits, and other applications where P-Channel MOSFETs are required. Its robust electrical characteristics make it a reliable choice for designers.
The drain-source breakdown voltage is -60V minimum at VGS=0V and ID=-250μA.
The maximum continuous drain current is -53A at TC=25°C, -46.8A at TC=70°C, and 9.2A at TA=25°C when surface mounted on FR4.
The maximum on-state resistance is 0.0195Ω at VGS=-10V and 0.025Ω at VGS=-4.5V, both at ID=-53A.
The gate-source threshold voltage ranges from -1V minimum to -3V maximum, with a typical value of -1V at VDS=VGS and ID=-250μA.
The typical gate charge is 76nC.
The maximum gate-source leakage current is ±100nA at VDS=0V and VGS=±20V.