| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,920 pcs
|
6920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SUP53P06-20-E3 is a P-Channel power MOSFET designed for load switching applications. It offers a Drain-Source Voltage (Vds) of 60V and a maximum continuous drain current of 53A at 25°C case temperature.
This MOSFET exhibits a low on-resistance, with a maximum of 19.5mΩ at 10V gate-source voltage and 30A drain current, and 25mΩ at 4.5V gate-source voltage and 30A drain current. The typical gate charge (Qg) is 76nC at 10V gate-source voltage.
Packaged in a TO-220AB through-hole configuration, the SUP53P06-20-E3 operates within a junction temperature range of -55°C to +150°C. Its thermal resistance from junction to case is a maximum of 1.2°C/W, enabling efficient heat dissipation.
Key electrical parameters include a gate-source voltage range of ±20V and a gate-source threshold voltage (Vgs(th)) maximum of 3V at 250µA. The device is also tested for avalanche current and energy, with a single pulse avalanche energy rating of 101mJ.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -60 V.
The SUP53P06-20-E3 comes in a TO-220-3 (TO-220AB) through-hole package.
The junction and storage temperature range is -55°C to +150°C.
Continuous drain current is 53 A at TC = 25 °C, and 9.2 A at TA = 25 °C.
Maximum on-resistance is 19.5 mΩ at VGS = -10 V and ID = -30 A; 25 mΩ at VGS = -4.5 V.
Typical gate charge is 76 nC at VGS = -10 V and ID = -30 A; maximum 115 nC at VGS = -10 V.
Maximum power dissipation is 104.2 W at TC = 25 °C, and 3.1 W at TA = 25 °C.